defect control in semiconductors

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Defect Control In Semiconductors

Author : K. Sumino
ISBN : 9780444600646
Genre : Science
File Size : 89. 39 MB
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Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc. The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.

Extended Defects In Semiconductors

Author : D. B. Holt
ISBN : 9781139463591
Genre : Science
File Size : 61. 99 MB
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The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Proceedings Of The Symposium On Contamination Control And Defect Reduction In Semiconductor Manufacturing Iii

Author : Electrochemical Society. Electronics Division
ISBN : 1566770416
Genre : Semiconductors
File Size : 27. 25 MB
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Particle Control For Semiconductor Manufacturing

Author : Donovan
ISBN : 0824782429
Genre : Technology & Engineering
File Size : 67. 50 MB
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There is something Alice-in-Wonderlandish about powerful and vital computer systems being shut down by a microscopic mote that a hay-feverist wouldn't sneeze at, but as computer chips get smaller, smaller and smaller particles on their surface have a larger and larger effect on their performance. In

Defect And Impurity Engineered Semiconductors And Devices

Author :
ISBN : UOM:39015048317146
Genre : Semiconductors
File Size : 27. 15 MB
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Proceedings Of The Symposium On Process Control Diagnostics And Modeling In Semiconductor Manufacturing

Author : M. Meyyappan
ISBN : 1566770963
Genre : Process control
File Size : 85. 87 MB
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Dopants And Defects In Semiconductors Second Edition

Author : Matthew D. McCluskey
ISBN : 9781351977975
Genre : Science
File Size : 34. 58 MB
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Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Theory Of Defects In Semiconductors

Author : David A. Drabold
ISBN : 3540822704
Genre : Technology & Engineering
File Size : 77. 2 MB
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This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. The book discusses today's state-of-the-art, as well as tomorrow’s tools: the supercell-pseudopotential method, the GW formalism, Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments and more. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

D X Centres And Other Metastable Defects In Semiconductors Proceedings Of The Int Symposium Mauterndorf Austria 18 22 February 1991

Author : W. Jantsch
ISBN : 0750301538
Genre : Technology & Engineering
File Size : 86. 13 MB
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Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.

Non Stoichiometry In Semiconductors

Author : K.J. Bachmann
ISBN : 9780444600271
Genre : Technology & Engineering
File Size : 34. 88 MB
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Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines (materials scientists, physicists, chemists and device people) confronted with non-stoichiometry problems. The 40 papers, including 9 invited papers, give an advanced scenario of this wide interdisciplinary area, which is highly important in its diverse aspects of theory, implementation and applications. This work will be of interest not only to universities and laboratories engaged in studies and research in this field, but also to organizations and industrial centres concerned with implementations and applications. The diversity of the topics, as well as the extraordinary tempo in which Non-stoichiometry in Semiconductors has progressed in recent years attest to the permanent vitality of this field of research and development.

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