extended defects in semiconductors

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Extended Defects In Semiconductors

Author : D. B. Holt
ISBN : 9781139463591
Genre : Science
File Size : 52. 15 MB
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The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Point And Extended Defects In Semiconductors

Author : Giorgio Benedek
ISBN : 9781468457094
Genre : Science
File Size : 23. 39 MB
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The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

International Conference On Extended Defects In Semiconductors Eds 2008

Author : International conference on extended defects in semiconductors
ISBN : OCLC:1015315817
Genre :
File Size : 47. 59 MB
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A Contribution To The Study Of Extended Defects In Semiconductors

Author : Nirmal David Theodore
ISBN : CORNELL:31924059439079
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International Conference On Extended Defects In Semiconductors Held In Jaszowiec Poland On 6 11 September 1998

Author : Polish academy of sciences warsaw instof physics
ISBN : OCLC:45529681
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File Size : 72. 58 MB
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Partial Contents: Relaxation of misfit-induced strain in semiconductor heterostructures; Dislocations in relaxed SiGe/Si heterostructures; Misfit dislocations in epitaxial heterostructures: mechanisms of generation and multiplication; Dislocation mechanisms involved in the relaxation of heteroepitaxial semiconducting systems; Formation of dislocations in InGaAs/GaAs heterostructures; Quantum interference at misfit dislocations in III-V heterostructures; Crystalline defects as enhancement and limits to microminiaturization.

International Conference On Extended Defects In Semiconductors Eds 2010

Author :
ISBN : OCLC:724036056
Genre : Semiconductors
File Size : 71. 25 MB
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Point And Extended Defects In Semiconductors

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ISBN : OCLC:257064739
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Point And Extended Defects In Semiconductors

Author : G. Benedek
ISBN : OCLC:476656719
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Iii Nitride Semiconductors Electrical Structural And Defects Properties

Author : M.O. Manasreh
ISBN : 0080534449
Genre : Science
File Size : 70. 72 MB
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Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Extended Defects In Germanium

Author : Cor Claeys
ISBN : 9783540856146
Genre : Technology & Engineering
File Size : 30. 11 MB
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The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.

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