ferroelectric memories springer series in advanced microelectronics

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Ferroelectric Memories

Author : James F. Scott
ISBN : 9783662043073
Genre : Technology & Engineering
File Size : 52. 2 MB
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This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.

Springer Handbook Of Condensed Matter And Materials Data

Author : Werner Martienssen
ISBN : 9783540304371
Genre : Science
File Size : 84. 32 MB
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Springer Handbook of Condensed Matter and Materials Data provides a concise compilation of data and functional relationships from the fields of solid-state physics and materials in this 1200 page volume. The data, encapsulated in 914 tables and 1025 illustrations, have been selected and extracted primarily from the extensive high-quality data collection Landolt-Börnstein and also from other systematic data sources and recent publications of physical and technical property data. Many chapters are authored by Landolt-Börnstein editors, including the prominent Springer Handbook editors, W. Martienssen and H. Warlimont themselves. The Handbook is designed to be useful as a desktop reference for fast and easy retrieval of essential and reliable data in the lab or office. References to more extensive data sources are also provided in the book and by interlinking to the relevant sources on the enclosed CD-ROM. Physicists, chemists and engineers engaged in fields of solid-state sciences and materials technologies in research, development and application will appreciate the ready access to the key information coherently organized within this wide-ranging Handbook. From the reviews: "...this is the most complete compilation I have ever seen... When I received the book, I immediately searched for data I never found elsewhere..., and I found them rapidly... No doubt that this book will soon be in every library and on the desk of most solid state scientists and engineers. It will never be at rest." -Physicalia Magazine

Ferroelectric Gate Field Effect Transistor Memories

Author : Byung-Eun Park
ISBN : 9789402408416
Genre : Technology & Engineering
File Size : 20. 53 MB
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This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Springer Handbook Of Materials Data

Author : Hans Warlimont
ISBN : 9783319697437
Genre : Technology & Engineering
File Size : 24. 93 MB
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The second edition of this well-received handbook is the most concise yet comprehensive compilation of materials data. The chapters provide succinct descriptions and summarize essential and reliable data for various types of materials. The information is amply illustrated with 900 tables and 1050 figures selected primarily from well-established data collections, such as Landolt-Börnstein, which is now part of the SpringerMaterials database. The new edition of the Springer Handbook of Materials Data starts by presenting the latest CODATA recommended values of the fundamental physical constants and provides comprehensive tables of the physical and physicochemical properties of the elements. 25 chapters collect and summarize the most frequently used data and relationships for numerous metals, nonmetallic materials, functional materials and selected special structures such as liquid crystals and nanostructured materials. Along with careful updates to the content and the inclusion of timely and extensive references, this second edition includes new chapters on polymers, materials for solid catalysts and low-dimensional semiconductors. This handbook is an authoritative reference resource for engineers, scientists and students engaged in the vast field of materials science.

Vlsi Memory Chip Design

Author : Kiyoo Itoh
ISBN : 9783662044780
Genre : Technology & Engineering
File Size : 43. 45 MB
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A systematic description of microelectronic device design. Topics range from the basics to low-power and ultralow-voltage designs, subthreshold current reduction, memory subsystem designs for modern DRAMs, and various on-chip supply-voltage conversion techniques. It also covers process and device issues as well as design issues relating to systems, circuits, devices and processes, such as signal-to-noise and redundancy.

Japanese Journal Of Applied Physics

Author :
ISBN : UCSD:31822032891731
Genre : Physics
File Size : 44. 67 MB
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Development Of Hfo2 Based Ferroelectric Memories For Future Cmos Technology Nodes

Author : Stefan Ferdinand Müller
ISBN : 9783739248943
Genre : Technology & Engineering
File Size : 31. 16 MB
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This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.

Low Dielectric Constant Materials For Ic Applications

Author : Paul S. Ho
ISBN : 3540678190
Genre : Science
File Size : 88. 31 MB
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Low dielectric materials are an important component of microelectronic devices. In this carefully edited volume the leading researchers give an introduction to and a survey of the various fields of dielectrics for IC integration. The book appeals to materials reserachers, electrical engineers and advanced students.

Large Area And Flexible Electronics

Author : Mario Caironi
ISBN : 9783527679997
Genre : Technology & Engineering
File Size : 80. 52 MB
Format : PDF
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From materials to applications, this ready reference covers the entire value chain from fundamentals via processing right up to devices, presenting different approaches to large-area electronics, thus enabling readers to compare materials, properties and performance. Divided into two parts, the first focuses on the materials used for the electronic functionality, covering organic and inorganic semiconductors, including vacuum and solution-processed metal-oxide semiconductors, nanomembranes and nanocrystals, as well as conductors and insulators. The second part reviews the devices and applications of large-area electronics, including flexible and ultra-high-resolution displays, light-emitting transistors, organic and inorganic photovoltaics, large-area imagers and sensors, non-volatile memories and radio-frequency identification tags. With its academic and industrial viewpoints, this volume provides in-depth knowledge for experienced researchers while also serving as a first-stop resource for those entering the field.

High Permittivity Gate Dielectric Materials

Author : Samares Kar
ISBN : 9783642365355
Genre : Technology & Engineering
File Size : 65. 29 MB
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"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

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