iii nitride semiconductors electrical structural and defects properties

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Iii Nitride Semiconductors Electrical Structural And Defects Properties

Author : M.O. Manasreh
ISBN : 0080534449
Genre : Science
File Size : 47. 45 MB
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Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.

Iii Nitride Semiconductors

Author : Hongxing Jiang
ISBN : 1560329726
Genre : Technology & Engineering
File Size : 75. 73 MB
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The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices. Part I begins with time-resolved studies of semiconductors and moves on to the emphasis on time-resolved photoluminescence of nitride materials and device technology and focuses on Raman studies and properties of III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds. This would be excellent for newcomers to the field and is a stimulus to further advances for experienced researchers.III-Nitride Semiconductors: Optical Properties Part I combines contributions from active experts in the field with diverse backgrounds. This book provides a very important step in advancing the state of research and device development in the field of III-nitride materials.

Gan Based Materials And Devices

Author : Michael Shur
ISBN : 9789812388445
Genre : Technology & Engineering
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The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Dilute Nitride Semiconductors

Author : Mohamed Henini
ISBN : 0080455999
Genre : Technology & Engineering
File Size : 73. 5 MB
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This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Optoelectronic Devices

Author : M. Razeghi
ISBN : 0080444261
Genre : Science
File Size : 64. 77 MB
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Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Led Lighting

Author : T. Q. Khan
ISBN : 9783527670161
Genre : Science
File Size : 86. 41 MB
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Promoting the design, application and evaluation of visually and electrically effective LED light sources and luminaires for general indoor lighting as well as outdoor and vehicle lighting, this book combines the knowledge of LED lighting technology with human perceptual aspects for lighting scientists and engineers. After an introduction to the human visual system and current radiometry, photometry and color science, the basics of LED chip and phosphor technology are described followed by specific issues of LED radiometry and the optical, thermal and electric modeling of LEDs. This is supplemented by the relevant practical issues of pulsed LEDs, remote phosphor LEDs and the aging of LED light sources. Relevant human visual aspects closely related to LED technology are described in detail for the photopic and the mesopic range of vision, including color rendering, binning, whiteness, Circadian issues, as well as flicker perception, brightness, visual performance, conspicuity and disability glare. The topic of LED luminaires is discussed in a separate chapter, including retrofit LED lamps, LED-based road and street luminaires and LED luminaires for museum and school lighting. Specific sections are devoted to the modularity of LED luminaires, their aging and the planning and evaluation methods of new LED installations. The whole is rounded off by a summary and a look towards future developments.

Dilute Iii V Nitride Semiconductors And Material Systems

Author : Ayse Erol
ISBN : 3540745297
Genre : Technology & Engineering
File Size : 66. 17 MB
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This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.

Electrical Optical And Defect Properties Of Carbon Doped Gallium Nitride Grown By Molecular Beam Epitaxy

Author : Robert David Armitage
ISBN : UCAL:C3486159
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Oxide And Nitride Semiconductors

Author : Takafumi Yao
ISBN : 9783540888475
Genre : Technology & Engineering
File Size : 58. 39 MB
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This is a unique book devoted to the important class of both oxide and nitride semiconductors. It covers processing, properties and applications of ZnO and GaN. The aim of this book is to provide the fundamental and technological issues for both ZnO and GaN.

Nitride Wide Bandgap Semiconductor Material And Electronic Devices

Author : Yue Hao
ISBN : 9781315351834
Genre : Science
File Size : 45. 67 MB
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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

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