metal semiconductor contacts and devices 13 vlsi electronics microstructure science

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Metal Semiconductor Contacts And Devices

Author : Simon S. Cohen
ISBN : 9781483217796
Genre : Technology & Engineering
File Size : 36. 51 MB
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VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.

Vlsi Metallization

Author : Norman G. Einspruch
ISBN : UCSD:31822003040912
Genre : Science
File Size : 25. 74 MB
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Microelectronics Manufacturing Diagnostics Handbook

Author : Abraham Landzberg
ISBN : 9781461520290
Genre : Technology & Engineering
File Size : 82. 99 MB
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The world of microelectronics is filled with cusses measurement systems, manufacturing many success stories. From the use of semi control techniques, test, diagnostics, and fail ure analysis. It discusses methods for modeling conductors for powerful desktop computers to their use in maintaining optimum engine per and reducing defects, and for preventing de formance in modem automobiles, they have fects in the first place. The approach described, clearly improved our daily lives. The broad while geared to the microelectronics world, has useability of the technology is enabled, how applicability to any manufacturing process of similar complexity. The authors comprise some ever, only by the progress made in reducing their cost and improving their reliability. De of the best scientific minds in the world, and fect reduction receives a significant focus in our are practitioners of the art. The information modem manufacturing world, and high-quality captured here is world class. I know you will diagnostics is the key step in that process. find the material to be an excellent reference in of product failures enables step func Analysis your application. tion improvements in yield and reliability. which works to reduce cost and open up new Dr. Paul R. Low applications and technologies. IBM Vice President and This book describes the process ofdefect re of Technology Products General Manager duction in the microelectronics world.

Reduced Thermal Processing For Ulsi

Author : R.A. Levy
ISBN : 9781461305415
Genre : Science
File Size : 74. 8 MB
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As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.

Vlsi Metallization

Author : Norman G. Einspruch
ISBN : 9781483217819
Genre : Technology & Engineering
File Size : 38. 90 MB
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VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.

Iii V Nitride Semiconductors

Author : Edward T. Yu
ISBN : 1560329742
Genre : Technology & Engineering
File Size : 29. 90 MB
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The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.

Vlsi Metallization

Author : Krishna Shenai
ISBN : 0890065012
Genre : Technology & Engineering
File Size : 56. 98 MB
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This comprehensive collection of reprinted articles presents the most important developments on VLSI contact and interconnect technologies and applications. The book covers important developments in metallization of compound semiconductor technologies, and includes a section on metallization reliability and high speed testing.

Metal Semiconductor Contacts And Devices

Author : Simon S. Cohen
ISBN : IND:30000097214252
Genre : Technology & Engineering
File Size : 37. 49 MB
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Application Specific Integrated Circuit Asic Technology

Author : Norman G. Einspruch
ISBN : 0122341236
Genre : Application specific integrated circuits.
File Size : 61. 66 MB
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V. 1-5. [without special title] -- v. 6. Materials and process characterization -- v. 7. [without special title] -- v. 8. Plasma processing for VLSI -- v. 9. [without special title] -- v. 10. Surface and interface effects in VLSI -- v. 11. GaAs microelectronics -- v. 12. Silicon materials -- v. 13. Metal-semiconductor contacts and devices -- v. 14. VLSI design -- v. 15. VLSI metallization -- v. 16. Lithography for VLSI -- v. 17. VLSI in medicine -- v. 18. Advanced MOS device physics -- v. 19. Advanced CMOS process technology -- 20. VLSI and computer architecture -- v. 21. Beam processing technologies -- v. 22. VLSI reliability -- v. 23. Application specific integrated circuit (ASIC) technology -- v. 24. Heterostructures and quantum devices.

Silicon Carbide And Related Materials 1995 Proceedings Of The Sixth Int Conference Kyoto Japan 18 21 September 1995

Author : Nakashima
ISBN : 0750303352
Genre : Silicon carbide
File Size : 21. 1 MB
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The special advantages of silicon carbide and related materials such as III-V nitrides in applications in hostile environments and for blue-light-emitting diodes continue to stimulate research and development activity. The International Conference on Silicon Carbide and related Materials is now the established forum for exchanging information on advances in this subject. This volume includes both invited and contributed papers covering the whole field of silicon carbide and related materials research, from the fundamental physics of these materials, through their growth, control of properties, characterization, surface and interface modification, device processing and fabrication, to simulation and modelling. Materials scientists, electronic engineers and solid state physicists who work with these materials, as well as those who are contemplating research in this expanding field, will find this a unique single source of information.

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