semiconductor device fundamentals

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Semiconductor Device Fundamentals

Author : Robert F. Pierret
ISBN : 0131784595
Genre : Semiconductors
File Size : 68. 38 MB
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Although roughly a half-century old, the field of study associated with semiconductor devices continues to be dynamic and exciting. New and improved devices are being developed at an almost frantic pace. While the number of devices in complex integrated circuits increases and the size of chips decreases, semiconductor properties are now being engineered to fit design specifications. Semiconductor Device Fundamentals serves as an excellent introduction to this fascinating field. Based in part on the Modular Series on Solid State Devices, this textbook explains the basic terminology, models, properties, and concepts associated with semiconductors and semiconductor devices. The book provides detailed insight into the internal workings of building block device structures and systematically develops the analytical tools needed to solve practical device problems.

Semiconductor Device Physics And Simulation

Author : J.S. Yuan
ISBN : 0306457245
Genre : Technology & Engineering
File Size : 35. 29 MB
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The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.

Semiconductor Device Fundamentals

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ISBN : 8973352563
Genre :
File Size : 56. 22 MB
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Fundamentals Of Silicon Carbide Technology

Author : Tsunenobu Kimoto
ISBN : 9781118313558
Genre : Technology & Engineering
File Size : 31. 78 MB
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A comprehensive introduction and up-to-date reference toSiC power semiconductor devices covering topics from materialproperties to applications Based on a number of breakthroughs in SiC material scienceand fabrication technology in the 1980s and 1990s, the first SiCSchottky barrier diodes (SBDs) were released as commercial productsin 2001. The SiC SBD market has grown significantly sincethat time, and SBDs are now used in a variety of power systems,particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011,providing rugged, high-efficiency switches for high-frequency powersystems. In this wide-ranging book, the authors draw on theirconsiderable experience to present both an introduction to SiCmaterials, devices, and applications and an in-depth reference forscientists and engineers working in this fast-movingfield. Fundamentals of Silicon Carbide Technologycovers basic properties of SiC materials, processing technology,theory and analysis of practical devices, and an overview of themost important systems applications. Specifically includedare: A complete discussion of SiC material properties, bulk crystalgrowth, epitaxial growth, device fabrication technology, andcharacterization techniques. Device physics and operating equations for Schottky diodes, pindiodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, andthyristors. A survey of power electronics applications, includingswitch-mode power supplies, motor drives, power converters forelectric vehicles, and converters for renewable energysources. Coverage of special applications, including microwave devices,high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognizedexperts with over 45 years of combined experience in SiC researchand development. This book is intended for graduate students and researchers incrystal growth, material science, and semiconductor devicetechnology. The book is also useful for design engineers,application engineers, and product managers in areas such as powersupplies, converter and inverter design, electric vehicletechnology, high-temperature electronics, sensors, and smart gridtechnology.

Matlab

Author : Vasilios Katsikis
ISBN : 9789535107521
Genre : Computers
File Size : 72. 88 MB
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This excellent book represents the final part of three-volumes regarding MATLAB-based applications in almost every branch of science. The book consists of 19 excellent, insightful articles and the readers will find the results very useful to their work. In particular, the book consists of three parts, the first one is devoted to mathematical methods in the applied sciences by using MATLAB, the second is devoted to MATLAB applications of general interest and the third one discusses MATLAB for educational purposes. This collection of high quality articles, refers to a large range of professional fields and can be used for science as well as for various educational purposes.

Field Effect Transistors A Comprehensive Overview

Author : Pouya Valizadeh
ISBN : 9781119155782
Genre : Technology & Engineering
File Size : 43. 91 MB
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This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

Fundamentals Of Power Semiconductor Devices

Author : B. Jayant Baliga
ISBN : 0387473149
Genre : Technology & Engineering
File Size : 68. 26 MB
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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Handbook Of Wafer Bonding

Author : Peter Ramm
ISBN : 9783527644230
Genre : Technology & Engineering
File Size : 77. 21 MB
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The focus behind this book on wafer bonding is the fast paced changes in the research and development in three-dimensional (3D) integration, temporary bonding and micro-electro-mechanical systems (MEMS) with new functional layers. Written by authors and edited by a team from microsystems companies and industry-near research organizations, this handbook and reference presents dependable, first-hand information on bonding technologies. Part I sorts the wafer bonding technologies into four categories: Adhesive and Anodic Bonding; Direct Wafer Bonding; Metal Bonding; and Hybrid Metal/Dielectric Bonding. Part II summarizes the key wafer bonding applications developed recently, that is, 3D integration, MEMS, and temporary bonding, to give readers a taste of the significant applications of wafer bonding technologies. This book is aimed at materials scientists, semiconductor physicists, the semiconductor industry, IT engineers, electrical engineers, and libraries.

Handbook Of Nitride Semiconductors And Devices Materials Properties Physics And Growth

Author : Hadis Morkoç
ISBN : 9783527628469
Genre : Technology & Engineering
File Size : 50. 57 MB
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The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.

Handbook Of Nitride Semiconductors And Devices Electronic And Optical Processes In Nitrides

Author : Hadis Morkoç
ISBN : 9783527628421
Genre : Technology & Engineering
File Size : 79. 30 MB
Format : PDF
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The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.

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